Delay line interferometer with polarization compensation at selective frequency

ABSTRACT

An apparatus of polarization self-compensated delay line interferometer. The apparatus includes a first waveguide arm of a first material of a first length disposed between an input coupler and an output coupler and a second waveguide arm of the first material of a second length different from the first length disposed between the same input coupler and the same output coupler. The apparatus produces an interference spectrum with multiple periodic passband peaks where certain TE (transverse electric) and TM (transverse magnetic) polarization mode passband peaks are lined up. The apparatus further includes a section of waveguide of a birefringence material of a third length added to the second waveguide arm to induce a phase shift of the lined-up TE/TM passband peaks to a designated grid as corresponding polarization compensated channels of a wide optical band.

BACKGROUND OF THE INVENTION

The present invention relates to optical communication techniques, moreparticularly, the present invention provides a delay line interferometerbased on silicon photonics waveguides with polarization compensation atselective frequencies.

Over the last few decades, the use of communication networks hasexploded. In the early days Internet, popular applications were limitedto emails, bulletin board, and mostly informational and text-based webpage surfing, and the amount of data transferred was relatively small.Today, Internet and mobile applications demand a huge amount ofbandwidth for transferring photo, video, music, and other multimediafiles. For example, a social network like Facebook processes more than500TB of data daily. With such high demands on data and data transfer,existing data communication systems need to be improved to address theseneeds.

40-Gbit/s and then 100-Gbit/s data rate dense-wavelength-divisionmultiplexing (DWDM) optical transmission over existing single-mode fiberis a developing target for the next generation of fiber-opticcommunication networks. The big hang up so far has been the fiberimpairments like chromatic dispersion that are slowing the communicationsignal down. Everything is okay up to 10 Gbits/s for distances less than100 km and at 1300 nm transmission wavelength, but beyond that,distortion and attenuation take their toll. Many approaches are proposedon modulation methods for transmitting two or more bits per symbol sothat higher communication rates can be achieved. Mach-Zehnder modulatorscan handle the higher data rates but require a driver that isdifferential with a wide output voltage swing. Beyond the lightmodulation for data transmission, the optical multiplexer (MUX) andde-multiplexer (DEMUX) of light signals is an essential building blockfor the optical network based on silicon photonics.

Silicon photonic devices can be made using existing semiconductorfabrication techniques, and because silicon-on-insulator is already usedas the substrate for most integrated circuits, it is possible to createhybrid devices in which the optical and electronic components areintegrated onto a single microchip. In particular, silicon photonicdevices have been applied in WDM, e.g., CWDM or particularly DWDM,optical transmission networks, in which MUX/DEMUX wavelengths may bechanged by environment temperature to cause problems to optical signalstransmitted through the networks. A delay line interferometer (DLI)based on silicon photonics waveguides can be an important 2-channelMUX/DEMUX device with very low loss based on time-delayed two-beaminterference in its two waveguide arms. However, for most given DLIdevice with two arms of a same material having a length difference ΔL,the group indices for TE and TM mode polarized light waves may bedifferent due to birefringence effect of the waveguide material, causingdifferent free spectral ranges for the TE mode and TM mode and resultingmisaligned TE and TM passbands. Therefore, it is desired to developsilicon photonics based delay line interferometer with polarizationcompensation at selective passband wavelengths for WDM applications.

BRIEF SUMMARY OF THE INVENTION

The present invention relates to optical communication techniques. Moreparticularly, the present invention provides a delay line interferometer(DLI) based on silicon photonics waveguides with polarizationcompensation at selective frequencies. Merely by example, the presentinvention discloses a DLI device with one or more polarizationcompensated passband wavelengths by adding a proper length ofbirefringence waveguide material and provides a method for manufacturingthe DLI device with the polarization compensated wavelength channelscovering entire C-band for high speed DWDM optical communications,though other applications are possible.

In modern electrical interconnect systems, high-speed serial links havereplaced parallel data buses, and serial link speed is rapidlyincreasing due to the evolution of CMOS technology. Internet bandwidthdoubles almost every two years following Moore's Law. But Moore's Law iscoming to an end in the next decade. Standard CMOS silicon transistorswill stop scaling around 5 nm. And the internet bandwidth increasing dueto process scaling will plateau. But Internet and mobile applicationscontinuously demand a huge amount of bandwidth for transferring photo,video, music, and other multimedia files. This disclosure describestechniques and methods to improve the communication bandwidth beyondMoore's law.

In an embodiment, the present invention provides an apparatus ofpolarization self-compensated delay line interferometer. The apparatusincludes a first waveguide arm disposed between an input coupler and anoutput coupler. Additionally, the apparatus includes a second waveguidearm disposed between the input coupler and the output coupler. Thesecond waveguide arm is at least different from the first waveguide armby a first length to induce an interference output spectrum having oneor more passband peaks lined up for TE (transverse electric)polarization mode and TM (transverse magnetic) polarization mode at oneor more channel frequencies of a designated optical band. Moreover, theapparatus includes a birefringence waveguide section of a second lengthinserted in the second waveguide arm to induce a phase shift of the oneor more passband peaks lined up for TE mode and TM mode at one or morealternative channel frequencies of the designated optical band. Thesecond length is selected from a fixed set of values stepwiselyincreased from zero to a maximum value with a predetermined increment.

In an alternative embodiment, the present invention provides a methodfor forming a set of polarization self-compensated delay lineinterferometers. The method includes providing a first delay lineinterferometer. The first delay line interferometer includes a firstwaveguide arm of a first length disposed between an input coupler and anoutput coupler and a second waveguide arm of a second length disposedbetween the input coupler and the output coupler. The second length isat least different from the first length to induce an interferenceoutput spectrum having one or more passband peaks lined up for TE(transverse electric) polarization mode and TM (transverse magnetic)polarization mode at one or more channel frequencies of a designatedoptical band. The method further includes selecting a birefringencephase shifter of a third length. The third length is assigned a valuefrom a fixed set of values stepwise increased from a first non-zerovalue up to a maximum value with a predetermined increment. Moreover,the method includes forming a set of delay line interferometers byrespectively adding a set of the birefringence phase shifters of variousassigned values in the third length to the second waveguide arm of thefirst delay line interferometer.

The present invention achieves these benefits and others in the contextof known waveguide laser modulation technology. However, a furtherunderstanding of the nature and advantages of the present invention maybe realized by reference to the latter portions of the specification andattached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following diagrams are merely examples, which should not undulylimit the scope of the claims herein. One of ordinary skill in the artwould recognize many other variations, modifications, and alternatives.It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this process andscope of the appended claims.

FIGS. 1A and 1B are a schematic diagram of a regular delay lineinterferometer (DLI) device and corresponding DLI passbands withdifferent TE-TM polarization offsets.

FIG. 2 is a schematic diagram of a polarization compensated DLI devicebased on an added length of a birefringence waveguide according to anembodiment of the present invention.

FIG. 3 is a simplified diagram showing a DLI passband with a lined-upTE-TM peak frequency shifted with additional length of birefringencewaveguide in one arm according to an embodiment of the presentinvention.

FIG. 4 shows an example of a stepper reticle map of multiple differentlengths of birefringence waveguides respectively added for manufacturinga set of DLI devices with lined-up TE/TM passband peak frequencies tocover all channels of an entire spectral band according to an embodimentof the present invention.

FIG. 5 is a flow chart showing a method for manufacturing a set of DLIdevices respectively with polarization compensation at one or morefrequencies to cover all channels in entire C-band according to anembodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention relates to optical communication techniques. Moreparticularly, the present invention provides a delay line interferometer(DLI) based on silicon photonics waveguides with polarizationcompensation at selective frequencies. Merely by example, the presentinvention discloses a DLI device with one or more polarizationcompensated passband wavelengths by adding a proper length ofbirefringence waveguide material and provides a method for manufacturingthe DLI device with the polarization compensated wavelength channelscovering entire C-band for high speed DWDM optical communications,though other applications are possible.

The following description is presented to enable one of ordinary skillin the art to make and use the invention and to incorporate it in thecontext of particular applications. Various modifications, as well as avariety of uses in different applications will be readily apparent tothose skilled in the art, and the general principles defined herein maybe applied to a wide range of embodiments. Thus, the present inventionis not intended to be limited to the embodiments presented, but is to beaccorded the widest scope consistent with the principles and novelfeatures disclosed herein.

In the following detailed description, numerous specific details are setforth in order to provide a more thorough understanding of the presentinvention. However, it will be apparent to one skilled in the art thatthe present invention may be practiced without necessarily being limitedto these specific details. In other instances, well-known structures anddevices are shown in block diagram form, rather than in detail, in orderto avoid obscuring the present invention.

The reader's attention is directed to all papers and documents which arefiled concurrently with this specification and which are open to publicinspection with this specification, and the contents of all such papersand documents are incorporated herein by reference. All the featuresdisclosed in this specification, (including any accompanying claims,abstract, and drawings) may be replaced by alternative features servingthe same, equivalent or similar purpose, unless expressly statedotherwise. Thus, unless expressly stated otherwise, each featuredisclosed is one example only of a generic series of equivalent orsimilar features.

Furthermore, any element in a claim that does not explicitly state“means for” performing a specified function, or “step for” performing aspecific function, is not to be interpreted as a “means” or “step”clause as specified in 35 U.S.C. Section 112, Paragraph 6. Inparticular, the use of “step of” or “act of” in the Claims herein is notintended to invoke the provisions of 35 U.S.C. 112, Paragraph 6.

Please note, if used, the labels left, right, front, back, top, bottom,forward, reverse, clockwise and counter clockwise have been used forconvenience purposes only and are not intended to imply any particularfixed direction. Instead, they are used to reflect relative locationsand/or directions between various portions of an object.

FIGS. 1A and 1B are a schematic diagram of a regular delay lineinterferometer (DLI) device and corresponding DLI passbands withdifferent TE-TM polarization offsets. As shown in FIG. 1A, a delay lineinterferometer (DLI) device 100 is schematically depicted as twowaveguide arms A and B disposed between two Multimode Interference (MMI)couplers 131 and 132. The two waveguide arms A and B have at least alength difference ΔL or possibly made by different materials withrespective group indices of N_(A) and N_(B). Correspondingly, atime-delay difference for two light waves respectively traveling throughthe two waveguide arms of the DLI device is equal to an inverse freespectral range (FSR):

$\begin{matrix}{{\frac{L_{A}}{( {c/N_{A}} )} - \frac{L_{B}}{( {c/N_{B}} )}} = \frac{1}{FSR}} & (1)\end{matrix}$

where c is speed of light. Eq. (1) suggests that an interferencespectrum of the DLI device is a periodic multi-maxima passbands across awide spectral band where the spacing between two nearest peakfrequencies is defined as the FSR (i.e., the period of the interferencespectrum). On the other hand, as shown in FIG. 1B, most waveguidematerial has birefringence effect so that the group index for TEpolarization mode is different from the group index for TM polarizationmode, resulting in different FSR values for TE polarization mode and TMpolarization mode. This causes a varied offset between TE mode passbands101 and corresponding TM mode passbands 102 at different frequencies.

For example, for a pair of waveguide arms A and B both made by siliconnitride material (which is a birefringence material with respectivegroup indices of for TE mode N_(TE) ˜1.97 and for TM mode N_(TM)˜1.89)with a length difference of ΔL˜1555 μm gives FSR₁₀₁ of ˜98 GHz for TEmode passbands 101 and FSR₁₀₂ of ˜102 GHz for TM mode passbands 102. The4 GHz offset in FSR leads to most peak frequencies for TE mode and TMmode are off the mutual lineup except one or two passband peaks inentire spectral band. By changing at least the length difference ΔL, TEmode passband can be lined up with TM mode passband at one or moredifferent frequencies.

In another example, both the waveguide arm A and arm B are mode bysilicon material which has a polarization dependent index change about2× more temperature-sensitive than silicon nitride material.Alternatively, waveguide arm A and arm B can be made by differentmaterial. Optionally, arm A is made by silicon nitride and arm B is madeby silicon, or vise versa. Optionally, the waveguide arm A and arm B canbe made by silicon nitride mixed with silicon oxide (SiON), in which theweight percentage of silicon oxide can be varied from 0% to 99% toproduce varied polarization dependent group index for differentapplications.

In general, each passband peak for the DLI device 100 can be set to achannel of dense wavelength-division multiplexing (DWDM) ITU grid in awide spectral band, e.g., C-band (wavelength range 1531 nm to 1570 nm).For DWDM applications with ITU grid, the FSR of the DLI device isconfigured to be twice of the channel spacing that is typically 100 GHz,or 50 GHz, or 25 GHz, or 12.5 GHz, or alternatively go extremely smallas 5 GHz or even 2.5 GHz. For coarse wavelength-division multiplexing(CWDM) application, the channel spacing can be 200 GHz or higher. Thefree spectral spacing FSR defined above is equal to twice of channelspacing between two nearest channels in the designated frequency grid(e.g., 50 GHz ITU grid in DWDM or 200 GHz grid in CWDM in entireC-band). In order to ensure a particular channel in the C-band to beTE/TM polarization compensated, the length difference between the twobirefringence waveguide arms must be properly selected to line up the TEmode passband peak with corresponding TM mode passband peak at theparticular channel frequency.

FIG. 2 is a schematic diagram of a polarization compensated DLI devicebased on an added length of a birefringence waveguide according to anembodiment of the present invention. This diagram is merely an example,which should not unduly limit the scope of the claims. One of ordinaryskill in the art would recognize many variations, alternatives, andmodifications. As shown, a length L_(b) of a birefringence waveguide 220is added to form a waveguide arm B′ of the DLI device 200. The addedlength L_(b) contributes an additional phase offset between TEpolarization mode and TM polarization mode in the passbands of the DLIdevice 200 so that the line-up TE/TM passband peak frequency is shiftedto a different value in the wide spectral band, e.g., a C-band.

In an embodiment, the added birefringence waveguide 220 in the arm B′ ofDLI device 200 is substantially made by the same birefringence materialof original arm B of DLI device 100. In another embodiment, the addedbirefringence waveguide 220 is a planar waveguide section having a sameheight as the arm B′ of the DLI device 200, herein the added length ofthe birefringence waveguide 220 alone contributes the phase offsetchange for shifting the line-up TE/TM passband peak frequency. Inanother embodiment, the added birefringence waveguide 220 in the arm B′of the DLI device 200 has a different width compared to originalwaveguide section and coupled to each other by a width adaptive taper(not explicitly shown). In certain embodiment, the different width ofthe added birefringence waveguide 220 also contributes the phase offsetchange for shifting the line-up TE-TM passband peak frequency, thoughthe width contribution to the phase shift mostly is less effective andharder to control compared to the length contribution. In yet stillanother embodiment, the added birefringence waveguide 220 in the arm B′of the DLI device 200 is made by a different birefringence materialcomparing to that of original waveguide arm B of DLI device 100.

FIG. 3 is a simplified diagram showing a DLI passband with a line-upTE-TM peak frequency shifted with additional length of birefringencewaveguide in one arm according to an embodiment of the presentinvention. This diagram is merely an example, which should not undulylimit the scope of the claims. One of ordinary skill in the art wouldrecognize many variations, alternatives, and modifications. As shown, aninterference spectrum B1 of a first DLI device is associated with alined-up TE/TM passband peak frequency f1 corresponding to an addedlength L_(b1) of birefringence waveguide in one arm of the first DLIdevice. Referring to FIG. 2, a simplified illustration of one waveguidearm with added length of birefringence waveguide is provided.Additionally, for a second DLI device, a length of L_(b2) ofbirefringence waveguide is added so that the phase offset of TE/TM modeis changed to cause the TE/TM passband peak frequency to line up atfrequency f2 in the interference spectrum B2. Further, a third DLIdevice corresponds to a lined-up TE/TM passband peak frequency f3 in theinterference spectrum B3 due to an added length L_(b3) of birefringencewaveguide and a fourth DLI device corresponds to a lined-up TE/TMpassband peak frequency f4 in the interference spectrum B4 due to anadded length L_(b4) of birefringence waveguide. FIG. 3 merely showsseveral examples of lined-up passband peak frequencies f1, f2, f3, andf4, shifting from one to another by about 2×FSR along frequency axis,although the lined-up TE/TM peak frequency can be shifted by anyfrequency spacing depending on the phase offset change caused by aproperly selected value of at least the added length L_(b) of thebirefringence waveguide.

FIG. 4 shows an example of a stepper reticle map of multiple differentlengths of birefringence waveguides respectively added for manufacturinga set of DLI devices with lined-up TE/TM passband peak frequencies tocover all channels of an entire spectral band according to an embodimentof the present invention. This diagram is merely an example, whichshould not unduly limit the scope of the claims. One of ordinary skillin the art would recognize many variations, alternatives, andmodifications. As pointed earlier, by changing the length of onebirefringence waveguide of one arm relative to another, the TE/TM modepassband peaks can be adjusted to be lined up at different frequencies.In an example, a DLI device with two waveguide arms made silicon nitridematerial, which is a birefringence material with slightly differentgroup indices N_(TE)˜1.97 and N_(TM)˜1.89 respectively for TE mode andTM mode of light waves of entire C-band frequencies. The birefringenceeffect induces an offset for TE mode period FSR_(TE) relative to TM modeperiod FSR_(TM) of the multi-maxima interference spectrum of the DLIdevice. The offset causes most TE passband peaks off from correspondingTM passband peaks while having just one or a few more TE/TM peaks linedup, for example, at f1 for the interference spectrum B1.

As the TE/TM offset increases with increasing length of one waveguidearm by adding a L_(b) length of birefringence waveguide, for examplewaveguide 220 as seen in FIG. 2, originally lined-up TE/TM passbandpeaks will be no longer lined up to each other, for example at f1, whileone or more other TE/TM passband peaks at higher frequencies, forexample at f2>f1 as seen in FIG. 3, may be lined up depending onspecific phase change caused by the value of added length L_(b).Optionally, the birefringence waveguide is a silicon nitride planar waveguide. Alternatively, the birefringence waveguide is a silicon planarwave guide. Depending on the material used in the added waveguide andits birefringence effect, the total range and step size of the stepperreticle map can be properly defined to provide sufficient numbers ofL_(b) lengths for achieving polarization compensation for each and everychannel of a designated grid in an entire operational spectral band.

Referring to FIG. 4, the stepper reticle map can be defined as a groupof stepwise increased values from zero up to a maximum value with apredetermined increment. Theoretically, the maximum value of the stepperreticle map is selected for inducing a total phase shift of 2π for theinterference spectrum of the delay line interferometer. The firstnon-zero value, which is equal to the increment value of the stepperreticle map, is determined to cause a minimum shift of the lined-upTE/TM passband peaks from at least one channel to a nearest channel ofthe same designated grid. Therefore, by selecting all values from thestepper reticle map for the added L_(b) length of silicon nitridewaveguide, a set of new DLI devices (200) can be formed by adding theselected L_(b) length of silicon nitride waveguide to one arm of a baseDLI device (100) to allow that each channel of the designated grid of awide spectral band is aligned at least once by a lined-up TE/TM passbandpeaks. In this way, each channel of designed grid in the entire spectralband can be configured to be a polarization compensated channel for atleast one of the set of new DLI devices (200).

For example, the DLI device 200 with silicon nitride waveguide, as thelength L_(b) of the added silicon nitride waveguide 220 increases up to50 μm the phase change can be greater than 2π to cause the lined-upTE/TM passband peak frequency to shift from one channel to anotheracross entire C-band. In other words, the added length L_(b) can belimited just within 0-50 range to induce all required phase changes in aset of DLI devices (200) to cause different shifts of the lined-up TE/TMpassband peak frequencies. Each of the set of the DLI devices (200) isconfigured to operate with TE/TM passband peaks being lined up orpolarization self-compensated at one or more frequencies. In a specificembodiment, in case that the lined-up TE/TM passband peak may not fallinto an exact channel frequency in a designated grid, a heater can beadded to one of the two waveguide arms of the DLI device to provide afiner shift to align the polarization compensated frequency to exactchannel frequency of the designated optical band. Optionally, a firstheater can be installed over a partial section of the first waveguidearm (arm A) for tuning the frequency for channel alignment by thermaleffect.

Referring to FIG. 4, multiple birefringence silicon nitride waveguidescan be selected with different lengths of L_(b) ranging from 0 μm to 45μm arranged in a 4×4 reticle map. In the embodiment, the length L_(b) isincreased by 3 μm every step according to the 4×4 reticle map for makinga set of DLI devices one after another with corresponding TE/TMpolarization compensated working frequencies. In another specificembodiment, the length L_(b) is increased k μm every step according tothe n×n reticle map for making a set of DLI devices one after anotherwith corresponding TE/TM polarization compensated working frequencies,where k is a number ranging from 0 to 3 μm and n is an integer torepresent the size of the reticle field depending on the frequency bandrange in which each individual channels is TE/TM polarizationself-compensated for at least one of the set of DLI devices.Alternatively, a second heater can be installed directly over the addedlength L_(b) of the birefringence waveguide for provide additionalthermal tuning of the TE or TM mode peak frequency. As silicon materialhas a polarization dependent group index with 2× higherthermal-sensitivity than that of silicon nitride material, the secondheater is disposed over a silicon based birefringence waveguide oflength L_(b1) can be more effective to tune TE mode peak frequency thana same heater is disposed over a silicon nitride based birefringencewaveguide of length L_(b2) Accordingly, a smaller value of length L_(b1)can be used to achieve same tuning effect as a larger value of lengthL_(b2), this effectively reduces the size of the reticle map andincreases production efficiency.

In an alternative embodiment, the phase shift can be introduced byadjusting waveguide width rather than merely by increasing length L_(b)for the added birefringence waveguide. Depending on the materialcharacteristics, the phase shift values obtained by changing waveguidewidth at different frequencies may be different and have a non-linerrelationship versus width values. Therefore, defining a reticle map forselecting different stepper lengths of added birefringence waveguide isrelatively easier than defining a reticle map based on differentwaveguide width, though it can be done in different way. Of course,there are other alternatives, variations and modifications.

FIG. 5 is a flow chart showing a method for manufacturing a set of DLIdevices respectively with polarization compensation at one or morefrequencies to cover all channels in entire C-band according to anembodiment of the present invention. This diagram is merely an example,which should not unduly limit the scope of the claims. One of ordinaryskill in the art would recognize many variations, alternatives, andmodifications. As shown, the method 500 includes a step 510 of providinga base delay line interferometer with a first arm and a second arm. Forexample, this delay line interferometer can be the DLI device 100 asshown in FIG. 1. In a specific embodiment, the base DLI device has anintrinsic birefringence effect so that most TE mode passband peaks ofthe operational interference spectrum are off from corresponding TM modepassband peaks except a few lined-up TE/TM peaks at certain frequenciesacross a wide operational band, e.g., C-band.

In an embodiment, the method 500 further includes a step 520 of adding abirefringence phase shifter to the second arm of the base DLI device.The added birefringence waveguide phase shifter can be a length ofwaveguide merged into the waveguide arm of the DLI device. For example,the added birefringence waveguide phase shifter is a length L_(b) ofbirefringence waveguide 220 having different group indices for TE modeand TM mode as shown in FIG. 2 to form the modified DLI device, e.g.,the DLI device 200 of FIG. 2. Accordingly, the added birefringencewaveguide phase shifter causes different phase shifts, L_(b)N_(TE) vs.L_(b)N_(TM), for TE mode and for TM mode, resulting in a shift in thoselined-up TE/TM passband peaks in frequency axis.

In the embodiment, the method 500 further includes a step 530 ofdefining a stepper reticle map of various lengths of the birefringencewaveguide phase shifters based on the waveguide material and width(assume a rectangular shape and a fixed height same as the waveguide ofthe second arm of the DLI device) as well as a particular operationalband. In a specific embodiment, the step 530 includes determining amaximum length value in the reticle map which corresponds to full periodof 2π phase shift. This provides a sufficient range of the reticle mapto achieve all the necessary shifts of the lined-up TE/TM passband peaksbecause the DLI interference spectrum includes multiple passbands with aperiod of FSR. Additionally, the step 530 includes determining a stepsize of the length variation over entire stepper reticle map so that theshifts of the lined-up TE/TM passband peaks in all set of DLI devicesmade with added various lengths of birefringence waveguide selected fromthe reticle map will cover each individual channel in a frequency gridof a particular operational band. For example, as shown in FIG. 4, astep size of 3 μm is chosen for a silicon nitride waveguide and 0.7 μmwaveguide width for operation in C-band.

Finally, the method 500 includes a step 540 of forming a set of DLIdevices by adding a set of various lengths of birefringence waveguidesrespectively selected from the defined reticle map. As long as thestepper reticle map is properly defined, each of the set of DLI devicesis able to achieve polarization compensation with lined-up TE/TMpassband peaks on one or more frequencies. In a specific embodiment,forming each DLI device includes adding a heater to one waveguide armfor fine tuning the passband frequencies to ensure they are aligned toparticular frequency grid of a designated operational band, for example,the C-band. In another specific embodiment, as the size of the totalreticle field is properly determined, the full set of DLI devices, eachhaving one or more polarization compensated passband channels aligned inparticular frequency grid, can have all channels of the designatedoperational band to be polarization compensated. This is very muchbeneficial for making a full spectrum polarization independent MUX/DEMUXmodule based on silicon photonics platform.

While the above is a full description of the specific embodiments,various modifications, alternative constructions and equivalents may beused. Therefore, the above description and illustrations should not betaken as limiting the scope of the present invention which is defined bythe appended claims.

1. (canceled)
 2. The Demux apparatus of claim 3 wherein the firstwaveguide arm and the second waveguide arm comprises one or more planarwaveguide sections having a same height formed in a same SOI substrateand isolated by silicon oxide.
 3. A Demux apparatus of polarizationself-compensated delay line interferometer, the apparatus comprising: afirst waveguide arm disposed between an input coupler and an outputcoupler; a second waveguide arm disposed between the input coupler andthe output coupler, wherein the second waveguide arm is at leastdifferent from the first waveguide arm by a first length to induce aninterference output spectrum having one or more passband peaks lined upfor TE (transverse electric) polarization mode and TM (transversemagnetic) polarization mode at one or more channel frequencies of adesignated optical band, wherein each of the one or more passband peakshaving both TE/TM modes lined up is demultiplexed to a correspondingport of the output coupler; a birefringence waveguide section of asecond length inserted in the second waveguide arm to induce a phaseshift of the one or more passband peaks lined up for TE mode and TM modeat one or more alternative channel frequencies of the designated opticalband, the second length being selected from a fixed set of valuesstepwisely increased from zero to a maximum value with a predeterminedincrement so that all channels with lined-up TE and TM mode in thedesignated optical band can be included, wherein the first waveguide armcomprises a material selected from silicon nitride and silicon nitridemixed with silicon oxide.
 4. The Demux apparatus of claim 3 wherein thesecond waveguide arm comprises the same material or an alternativeselection of silicon, silicon nitride, and silicon nitride mixed withsilicon oxide.
 5. The Demux apparatus of claim 3 wherein thebirefringence waveguide section comprises a material selected fromsilicon and silicon nitride.
 6. The Demux apparatus of claim 2 whereinthe birefringence waveguide section comprises the same height as theplanar waveguide section of the second waveguide arm but a widerwaveguide width than the second waveguide arm for providing additionalphase shift beyond length delay for TE mode and TM mode that is tuned instepwise manner so that multiple Demux apparatuses of same kind butcovering one or more alternative channels of a DWDM/CWDM band can beformed.
 7. The Demux apparatus of claim 6 further comprising awidth-adaptive taper for coupling the birefringence waveguide section tothe planar waveguide section of the second waveguide arm.
 8. The Demuxapparatus of claim 3 wherein the third length is selected to be themaximum value corresponding to 2π phase shift of a determined bydifference between a TE polarization mode group index and a TMpolarization mode group index of the birefringence waveguide section. 9.The Demux apparatus of claim 3 wherein the fixed set of valuesstepwisely increased define a stepper reticle field for determining thesecond length to allow each channel frequency of the designated opticalband to be reached by at least one phase shift of the one or morepassband peaks lined-up for TE mode and TM mode.
 10. The Demux apparatusof claim 3 further comprising a heater over at least a partial sectionof either the first waveguide arm or the second waveguide arm to changetemperature locally to introduce an additional phase delay to ensurethat the one or more passband peaks lined-up for TE mode and TM mode areaccurately aligned to one or more corresponding channel frequencies ofthe designated optical band.
 11. (canceled)
 12. The method of claim 13wherein providing a first delay line interferometer comprises formingthe first waveguide arm and the second waveguide arm in a common SOIsubstrate and isolating each other by an insulator cladding materialmade by silicon oxide.
 13. A method for forming a set ofpolarization-independent demultiplexers based on polarizationself-compensated delay line interferometers, the method comprising:providing a first delay line interferometer comprising: a firstwaveguide arm of a first length disposed between an input coupler and anoutput coupler; a second waveguide arm of a second length disposedbetween the input coupler and the output coupler, wherein the secondlength is at least different from the first length to induce aninterference output spectrum having one or more passband peaks lined upfor TE (transverse electric) polarization mode and TM (transversemagnetic) polarization mode at one or more channel frequencies of adesignated optical band, wherein each of the one or more passband peakshaving both TE/TM modes lined up is demultiplexed to a correspondingport of the output coupler; selecting a birefringence phase shifter of athird length, the third length being assigned a value from a fixed setof values stepwise increased from a first non-zero value up to a maximumvalue with a predetermined increment forming a set of delay lineinterferometers by respectively adding a set of the birefringence phaseshifters of various assigned values in the third length to the secondwaveguide arm of the first delay line interferometer so that allchannels with lined-up TE and TM mode in the designated optical band canbe included, wherein the first waveguide arm comprises a materialselected from silicon nitride and silicon nitride mixed with siliconoxide.
 14. The method of claim 13 wherein the second waveguide armcomprises the same material or an alternative selection of silicon,silicon nitride, and silicon nitride mixed with silicon oxide.
 15. Themethod of claim 13 wherein the birefringence phase shifter comprises awaveguide section of the third length made by silicon or siliconnitride.
 16. The method of claim 15 wherein the waveguide section of thethird length is a planar waveguide having a same height as the secondwaveguide arm but a wider waveguide width than the second waveguide armfor providing additional phase shift beyond length delay for TE mode andTM mode.
 17. The method of claim 16 further comprising using awidth-adaptive taper to couple the waveguide section of the third lengthto the second waveguide arm.
 18. The method of claim 13 wherein themaximum value corresponds to a phase shift up to 2π determined bydifference between a TE polarization mode group index and a TMpolarization mode group index of the birefringence phase shifter. 19.The method of claim 13 wherein the first non-zero value equals to thepredetermined increment corresponding to a minimum phase shift to causeat least one passband peak lined-up for TE and TM modes to shift fromone channel frequency to a nearest channel frequency of the designatedoptical band.
 20. The method of claim 13 further comprising disposing aheater over at least a partial section of the either the first waveguidearm or the second waveguide arm to change temperature locally tointroduce an additional phase delay to ensure that the one or morepassband peaks lined-up for TE mode and TM mode are accurately alignedto corresponding one or more channel frequencies of the designatedoptical band.